ACTUAL CARRIER MOBILITY DETERMINATION OF GAINASSB INAS GROWN BY LIQUID-PHASE EPITAXY

被引：5

作者：

YAMAGUCHI, T ^{[1
]}

SUZUKI, I ^{[1
]}

GONG, XY ^{[1
]}

KAN, H ^{[1
]}

AOYAMA, M ^{[1
]}

KUMAGAWA, M ^{[1
]}

机构：

[1] HAMAMATSU PHOTON KK,CENT RES LAB,HAMAKITA 434,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

CARRIER MOBILITY; CARRIER DENSITY; VANDERPAUW; LIQUID PHASE EPITAXY; GAINASSB; GD; RARE EARTH ELEMENT;

D O I：

10.7567/JJAPS.32S3.664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theory for the effective mobility and the density of carriers of a double layer is given and compared with an old theory established by Petritz [Phys. Rev. 110 (1958) 12541. Validity of the present theory is confirmed by an experiment using an epitaxial layer of Gd-doped GaInAsSb layer grown on an InAs substrate by Liquid Phase Epitaxial (LPE) method.

引用

页码：664 / 665

页数：2

共 9 条

[1]

ARIZUMI T, 1963, OYO BUTURI, V32, P863

[2]

BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[3]

GONG XY, 1993, JPN J APPL PHYS 1, V32, P711, DOI 10.1143/JJAP.32.711

[4] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].