GROWTH AND PROPERTIES OF LOW-DOPED IN0.53GA0.47AS LPE LAYERS USING RARE-EARTH-OXIDES

被引：16

作者：

NOVAK, J

KULIFFAYOVA, M

MORVIC, M

KORDOS, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90062-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：645 / 648

页数：4

共 9 条

[1]

BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[2] MN AS A P-TYPE DOPANT IN INO.53GAO.47ASON INP SUBSTRATES [J].

CHAND, N ;

HOUSTON, PA ;

ROBSON, PN .

ELECTRONICS LETTERS, 1981, 17 (20) :726-727

[3] GROWTH AND DOPING OF INGAASP/INP BY LIQUID-PHASE EPITAXY [J].

FIEDLER, F ;

WEHMANN, HH ;

SCHLACHETZKI, A .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :27-38

[4] RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].

KORBER, W ;

WEBER, J ;

HANGLEITER, A ;

BENZ, KW ;

ENNEN, H ;

MULLER, HD .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :741-744

[5]

KUPHAL E, 1983, J ELECTRON MATER, V12, P743, DOI 10.1007/BF02676801

[6]

MASTEROV VF, 1987, SOV PHYS SEMICOND+, V21, P1045

[7] THE CARRIER MOBILITIES IN GA0.47IN0.53AS GROWN BY ORGANOMETALLIC CVD AND LIQUID-PHASE EPITAXY [J].

PEARSALL, TP ;

HIRTZ, JP .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :127-131

[8] SCHOTTKY-BARRIERS ON P-TYPE GALNAS [J].

SELDERS, J ;

EMEIS, N ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :605-609

[9] PROPERTIES OF ZN-DOPED P-TYPE IN0.53GA0.47AS ON INP SUBSTRATE [J].

TAKEDA, Y ;

KUZUHARA, M ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :899-903

← 1 →