MN AS A P-TYPE DOPANT IN INO.53GAO.47ASON INP SUBSTRATES

被引:13
作者
CHAND, N
HOUSTON, PA
ROBSON, PN
机构
关键词
D O I
10.1049/el:19810510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:726 / 727
页数:2
相关论文
共 8 条
[1]  
CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072
[2]   FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE [J].
GOUSKOV, L ;
BILAC, S ;
PIMENTEL, J ;
GOUSKOV, A .
SOLID-STATE ELECTRONICS, 1977, 20 (08) :653-656
[3]   PREPARATION AND CHARACTERIZATION OF LPE INP [J].
KUPHAL, E .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :117-126
[4]   GE-DOPED INXGA1-XAS P-N-JUNCTIONS [J].
KURIHARA, M ;
MORIIZUMI, T ;
TAKAHASHI, K .
SOLID-STATE ELECTRONICS, 1973, 16 (07) :763-771
[5]  
PEARSALL TP, 1980, 8TH INT S GAAS REL C, P639
[6]   ELECTRICAL-PROPERTIES OF MANGANESE DOPED GA1-XINXAS GROWN BY LIQUID-PHASE EPITAXY [J].
PHATAK, SB ;
BEDAIR, SM ;
FUJITA, S .
SOLID-STATE ELECTRONICS, 1980, 23 (08) :839-&
[7]   PROPERTIES OF ZN-DOPED P-TYPE IN0.53GA0.47AS ON INP SUBSTRATE [J].
TAKEDA, Y ;
KUZUHARA, M ;
SASAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :899-903
[8]   INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY [J].
WILLIAMS, EW ;
ELDER, W ;
ASTLES, MG ;
WEBB, M ;
MULLIN, JB ;
STRAUGHAN, B ;
TUFTON, PJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1741-1749