MN AS A P-TYPE DOPANT IN INO.53GAO.47ASON INP SUBSTRATES

被引：13

作者：

CHAND, N

HOUSTON, PA

ROBSON, PN

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 20期

关键词：

D O I：

10.1049/el:19810510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：726 / 727

页数：2

共 8 条

[1]

CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072

[2] FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE [J].

GOUSKOV, L ;

BILAC, S ;

PIMENTEL, J ;

GOUSKOV, A .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :653-656

[3] PREPARATION AND CHARACTERIZATION OF LPE INP [J].

KUPHAL, E .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :117-126

[4] GE-DOPED INXGA1-XAS P-N-JUNCTIONS [J].

KURIHARA, M ;

MORIIZUMI, T ;

TAKAHASHI, K .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :763-771

[5]

PEARSALL TP, 1980, 8TH INT S GAAS REL C, P639

[6] ELECTRICAL-PROPERTIES OF MANGANESE DOPED GA1-XINXAS GROWN BY LIQUID-PHASE EPITAXY [J].

PHATAK, SB ;

BEDAIR, SM ;

FUJITA, S .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :839-&

[7] PROPERTIES OF ZN-DOPED P-TYPE IN0.53GA0.47AS ON INP SUBSTRATE [J].

TAKEDA, Y ;

KUZUHARA, M ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :899-903

[8] INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY [J].

WILLIAMS, EW ;

ELDER, W ;

ASTLES, MG ;

WEBB, M ;

MULLIN, JB ;

STRAUGHAN, B ;

TUFTON, PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1741-1749

← 1 →