GROWTH AND DOPING OF INGAASP/INP BY LIQUID-PHASE EPITAXY

被引：17

作者：

FIEDLER, F

WEHMANN, HH

SCHLACHETZKI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 74卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90245-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：27 / 38

页数：12

共 53 条

[1] BE DOPING OF LIQUID-PHASE-EPITAXIAL INP [J].

ABRAMS, EB ;

SUMSKI, S ;

BONNER, WA ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4469-4470

[2] EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS [J].

AMANO, T ;

TAKAHEI, K ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2105-2109

[3]

ANTYPAS GA, 1977, I PHYS C SER B, V33, P96

[4] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[5] DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES [J].

AYTAC, S ;

SCHLACHETZKI, A .

SOLID-STATE ELECTRONICS, 1982, 25 (11) :1135-&

[6] THE IN-GA-AS-ZN SYSTEM - LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON (111) B INP SUBSTRATES [J].

BENCHIMOL, JL ;

QUILLEC, M ;

LECORNEC, C ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :454-456

[7] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS [J].

BHATTACHARYA, PK ;

RAO, MV ;

TSAI, MJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5096-5102

[8] THE INCORPORATION OF TIN IN INDIUM-PHOSPHIDE [J].

BROZEL, MR ;

FOULKES, EJ ;

GRANT, IR ;

LI, L ;

HURLE, DTJ ;

WARE, RM .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :191-198

[9]

CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[10] MN AS A P-TYPE DOPANT IN INO.53GAO.47ASON INP SUBSTRATES [J].

CHAND, N ;

HOUSTON, PA ;

ROBSON, PN .

ELECTRONICS LETTERS, 1981, 17 (20) :726-727

← 1 2 3 4 5 6 →