GROWTH AND DOPING OF INGAASP/INP BY LIQUID-PHASE EPITAXY

被引：17

作者：

FIEDLER, F

WEHMANN, HH

SCHLACHETZKI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 74卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90245-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：27 / 38

页数：12

共 53 条

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[40] LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED INP AND IN.7GA.3AS.6P.4 [J].

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