LPE GROWTH OF HIGH-PURITY GA0.47IN0.53AS- AND GA0.31IN0.69AS0.69P0.31 LAYERS LATTICE MATCHED TO INP

被引：1

作者：

LINNEBACH, R

HESS, K

LOSCH, K

SCHEMMEL, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982508

中图分类号：

学科分类号：

摘要：

引用

页码：61 / 68

页数：8

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