DIRECT LPE GROWTH OF INP ON (111)A ORIENTED IN0.53GA0.47AS WITHOUT DISSOLUTION

被引：18

作者：

NAKAJIMA, K

YAMAZAKI, S

AKITA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 04期

关键词：

D O I：

10.1143/JJAP.21.L237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L237 / L239

页数：3

共 8 条

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[7] COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES [J].

NAKAJIMA, K ;

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[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP [J].

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