High-coupling-efficient 1.3-mu m laser diodes with good temperature characteristics

被引：6

作者：

Fukano, H

Yokoyama, K

Kadota, Y

Kondo, Y

Ueki, M

Yoshida, J

机构：

[1] NTT Opto-electronics Laboratories, Atsugi

[2] Tokyo Institute of Technology, Tokyo

[3] NTT Elec. Commun. Laboratories, Kanagawa

[4] Japan Society of Applied Physics, Institute of Electronics

[5] Osaka University, Osaka

[6] University of Tokyo, Tokyo

[7] Musashino Elec. Commun. Laboratory, NTT, Tokyo

[8] NTT Atsugi Elec. Commun. Laboratory, Kanagawa

[9] University of Illinois, Urbana, IL

[10] Inst. Electronics, Info. Commun. E., Japan Society of Applied Physics

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 11期

关键词：

D O I：

10.1109/3.541682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed uniformly beam-expanded structures based on the advanced concept for realizing high coupling efficiency and good temperature characteristics. Beam expansion (optical confinement reduction) by narrowing the core layer width as well as a carrier confinement are strongly enhanced by adopting a larger bandgap InGaAsP for MQW barriers and separate confinement heterostructure layers. These laser diodes (LD's) were fabricated by the conventional buried heterostructure laser process, which is very important in reducing the cost. Our results have proven the effectiveness of our proposition. The LD's with high coupling efficiency (-3.2 dB) and good temperature characteristics have been achieved even using the simple approach of reducing optical confinement. The threshold currents at 25 and 85 degrees C are 9.3 and 39.4 mA, respectively. The slope efficiency at 25 degrees C is 0.39 W/A and still high (0.26 W/A) even at 85 degrees C.

引用

页码：1959 / 1964

页数：6

共 18 条

[11] THE EFFECTS OF STRAIN ON THE THRESHOLD CURRENT-DENSITY IN INGAASP/INP STRAINED-LAYER SINGLE-QUANTUM-WELL LASERS [J].