Low voltage performance of Pb(Zr,Ti)O-3 capacitors through donor doping

被引：30

作者：

Yang, B ^{[1
]}

Song, TK ^{[1
]}

Aggarwal, S ^{[1
]}

Ramesh, R ^{[1
]}

机构：

[1] UNIV MARYLAND,CTR SUPERCOND RES,COLLEGE PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 24期

关键词：

D O I：

10.1063/1.120396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report low voltage (1.5-3 V) performance of ferroelectric Pb(Zr,Ti)O-3 based capacitors. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti0.9Al0.1)N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures. (C) 1997 American Institute of Physics. [S0003-6951(47)02750-2].

引用

页码：3578 / 3580

页数：3

共 15 条

[1] A critical comparative review of PZT and SBT-based science and technology for non-volatile ferroelectric memories [J].