Synthesis and lithographic evaluation of poly [(methaerylic acid tert-butyl cholate ester)-co-(-γ-butyrolactone-2-yl methacrylate)]

被引：22

作者：

Kim, JB

Ko, JS

Choi, JH

Jang, JH

Oh, TH

Kim, HW

Lee, BW

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Sch Mol Sci BK21, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Ctr Adv Funct Polymers, Taejon 305701, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Adv Mat Engn, Taejon 305701, South Korea

[4] Samsung Elect Co Ltd, Suwon 440600, South Korea

[5] Samsung SDI Co Ltd, Yongin 449902, Gyeonggi Do, South Korea

来源：

POLYMER | 2004年 / 45卷 / 16期

关键词：

ArF lithography; methacrylic acid tert-butyl cholate ester; -gamma-butyrolactone-2-yl methacrylate;

D O I：

10.1016/j.polymer.2004.05.041

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Poly [(methacrylic acid tert-butyl cholate ester)-co-(gamma-butyrolactone-2-yl methacrylate)] was synthesized and evaluated as a new 193-nm chemically amplified photoresist. This polymer showed good thermal stability up to 240 degreesC and had a good transmittance at 193 nm. This material showed good resistance to CF4-reactive ion etching. The resist patterns of 0.15 mum feature size were obtained at a dose of 11 mJ cm(-2) using an argon fluoride excimer laser stepper. (C) 2004 Published by Elsevier Ltd.

引用

页码：5397 / 5401

页数：5

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