dc field and temperature dependent acoustic resonances in parallel-plate capacitors based on SrTiO3 and Ba0.25Sr0.75TiO3 films:: Experiment and modeling

被引：86

作者：

Gevorgian, S. ^{[1
]}

Vorobiev, A.

Lewin, T.

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, S-41296 Gothenburg, Sweden

[2] Ericsson Telecom AB, Microwave & High Speed & Elect Res Ctr, S-43184 Molndal, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 12期

关键词：

D O I：

10.1063/1.2209727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimentally observed resonant absorption peaks in frequency dependent loss tangent in thin film parallel-plate SrTiO3 and Ba0.25Sr0.75TiO3 capacitors are explained by electrostriction and piezoelectric effects. A simple theory (linear approximation) is proposed to model the electric field and temperature dependences of the acoustic resonant frequencies, and the intensities of the microwave into acoustic transformations. The electric field dependence of the acoustic resonant frequencies may be used to develop tunable thin film bulk acoustic wave resonators (TFBARs) operating at frequencies up to 10 GHz and above. The expected tuneability of the TFBARs is more than 5%.

引用

页数：11

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