High-temperature ferromagnetism in manganese-doped indium-tin oxide films

被引：118

作者：

Philip, J ^{[1
]}

Theodoropoulou, N

Berera, G

Moodera, JS

Satpati, B

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

[2] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1773617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-temperature ferromagnetism is demonstrated in Mn-doped indium-tin oxide (ITO) films deposited using reactive thermal evaporation. These films were grown on sapphire (0001), Si/SiO2 as well as Si (100) substrates with the highest magnetic moment observed around 0.8 mu(B)/Mn in 5% Mn-doped ITO films. The electrical conduction is n type and the carrier concentration is similar to2.5x10(19) cm(-3) for 5% Mn doping. An anomalous Hall effect is observed in magnetotransport measurements, showing that the charge carriers are spin polarized, revealing the magnetic interaction between itinerant electrons and localized Mn spins. The carrier concentration can be varied independent of the Mn concentration in this transparent ferromagnetic semiconductor for its easy integration into magneto-optoelectronic devices. (C) 2004 American Institute of Physics.

引用

页码：777 / 779

页数：3

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