Photoluminescence spectrum of highly excited single CdS nanocrystals studied by a scanning near-field optical microscope

被引：17

作者：

Kanemitsu, Y ^{[1
]}

Inagaki, TJ

Ando, M

Matsuda, K

Saiki, T

White, CW

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan

[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1490141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Many-body effects in strongly photoexcited single CdS nanocrystals embedded in Al2O3 matrices have been studied by a scanning near-field optical microscope at low temperatures. Under weak excitations, we find a sharp photoluminescence (PL) band originating from the exciton recombination. With an increase of the excitation laser energy, the PL intensity increases and the broad PL band is superimposed on the exciton-related sharp PL band. From a theoretical analysis, it was concluded that the broadening of the PL band is due to electron-hole pairs in CdS nanocrystals. The many-body effects of correlated exciton systems in CdS nanocrystals will be discussed. (C) 2002 American Institute of Physics.

引用

页码：141 / 143

页数：3

共 15 条

[1] Sharp photoluminescence of CdS nanocrystals in Al2O3 matrices formed by sequential ion implantation [J].

Ando, M ;

Kanemitsu, Y ;

Kushida, T ;

Matsuda, K ;

Saiki, T ;

White, CW .

APPLIED PHYSICS LETTERS, 2001, 79 (04) :539-541

[2]

Brus LE, 1996, J LUMIN, V70, pR7

[3] Controlling the size, structure and orientation of semiconductor nanocrystals using metastable phase recrystallization [J].

Budai, JD ;

White, CW ;

Withrow, SP ;

Chisholm, MF ;

Zhu, J ;

Zuhr, RA .

NATURE, 1997, 390 (6658) :384-386

[4] TRANSIENT OPTICAL-SPECTRA OF A DENSE EXCITON GAS IN A DIRECT-GAP SEMICONDUCTOR [J].

FEHRENBACH, GW ;

SCHAFER, W ;

TREUSCH, J ;

ULBRICH, RG .

PHYSICAL REVIEW LETTERS, 1982, 49 (17) :1281-1284

[5] Many-body effects on the optical spectra of InAs/GaAs quantum dots [J].

Heitz, R ;

Guffarth, F ;

Mukhametzhanov, I ;

Grundmann, M ;

Madhukar, A ;

Bimberg, D .

PHYSICAL REVIEW B, 2000, 62 (24) :16881-16885

[6]

Hensel JC., 1978, SOLID STATE PHYS, V32, P87, DOI 10.1016/S0081-1947(08)60439-7

[7] Theory of the luminescence spectra of high-density electron-hole systems: crossover from excitonic Bose-Einstein condensation to electron-hole BCS state [J].

Inagaki, TJ ;

Aihara, M ;

Takahashi, A .

SOLID STATE COMMUNICATIONS, 2000, 115 (12) :645-650

[8]

MADELUNG O, 1982, LANDOLTBORNSTEIN B, V17

[9] Optical characterization of CdS nanocrystals in Al2O3 matrices fabricated by ion-beam synthesis [J].

Matsuura, D ;

Kanemitsu, Y ;

Kushida, T ;

White, CW ;

Budai, JD ;

Meldrum, A .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2289-2291

[10] Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices [J].

Okamoto, S ;

Kanemitsu, Y ;

Min, KS ;

Atwater, HA .

APPLIED PHYSICS LETTERS, 1998, 73 (13) :1829-1831

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