The effect of NaF precursors on low temperature growth of CIGS thin film solar cells on polyimide substrates

被引：50

作者：

Caballero, Raquel ^{[1
]}

Kaufmann, Christian A. ^{[1
]}

Eisenbarth, Tobias ^{[1
]}

Unold, Thomas ^{[1
]}

Schorr, Susan ^{[2
]}

Hesse, Raik ^{[1
]}

Klenk, Reiner ^{[1
]}

Schock, Hans-Werner ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Free Univ Berlin, Inst Geolog Wissensch, D-12249 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 05期

关键词：

D O I：

10.1002/pssa.200881144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this work is to study the effect of Na on low temperature growth of CIGS solar cells on polyimide (PI) substrates. The Na is introduced via evaporation of a NaF precursor layer prior to the absorber deposition. As reported previously, the devices at nominal T(sub,max) = 500 degrees C are characterized by a higher V(oc) when the Na content increases. However, lowering process temperature to nominally 450 degrees C together with high Na concentration produces a pronounced band gap grading through the absorber layer, as detected by energy dispersive X-ray spectroscopy (EDX). The absorber layers and the devices were studied by grazing incidence X-ray diffraction, external quantum efficiency and drive level capacitance profiling. A limit T(sub,max) is identified as detrimental on the PV performance when high Na concentration is added, mainly due to a reduced V(oc). 12.2% of efficiency (active area) is achieved reducing the Na concentration for the lower T(sub,max) (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1049 / 1053

页数：5

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