The influence of Na on low temperature growth of CIGS thin film solar cells on polyimide substrates

被引：105

作者：

Caballero, R. ^{[1
]}

Kaufmann, C. A. ^{[1
]}

Eisenbarth, T. ^{[1
]}

Cancela, M. ^{[1
]}

Hesse, R. ^{[1
]}

Unold, T. ^{[1
]}

Eicke, A. ^{[2
]}

Klenk, R. ^{[1
]}

Schock, H. W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch, D-70565 Stuttgart, Germany

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

CIGS solar cells; Polyimide substrate; Low temperature growth; Na content;

D O I：

10.1016/j.tsf.2008.10.085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The objective of this work is to study the influence of Na on the properties of Cu(In,Ga)Se-2 (CIGS) absorber layers and finished solar cell devices on polyimide substrates. For this study Na is added to 3-stage grown CIGS thin films by evaporation of a NaF precursor layer prior to the absorber deposition. The precursor layer modifies the CIGS growth kinetics. A stronger Ga-gradient and a decrease of grain size are observed when the Na content increases. An increase in V-oc for a higher Na concentration at a nominal growth temperature of T-sub,T-max = 500 degrees C during CIGS deposition is explained by a higher carrier density, as obtained by DLCP measurements. The higher carrier concentration for the higher Na content could be attributed to the reduction of a compensating donor. However, a low J(sc) does not allow for an enhanced efficiency possibly due to a shorter depletion region, as observed by admittance spectroscopy, and effective diffusion length. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2187 / 2190

页数：4

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