Cubic to hexagonal phase transition in CdTe polycrystalline thin films by oxygen incorporation

被引:31
作者
ArizpeChavez, H
EspinozaBeltran, FJ
RamirezBon, R
ZelayaAngel, O
GonzalezHernandez, J
机构
[1] INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
[2] IPN,CINVESTAV,INST INVEST MAT,QUERETARO,MEXICO
关键词
D O I
10.1016/S0038-1098(96)00554-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline oxygenated cadmium telluride thin films, with oxygen contents ranging from 0 to 15 at%, were grown by the reactive radio frequency sputtering technique. The structure of samples was studied using X-ray diffraction. The energy band gaps of the samples were obtained from optical absorption measurements. It was found that the cubic crystalline structure of as-deposited samples changes to the crystalline hexagonal CdTe phase and then to an amorphous CdTe:O structure as the oxygen content was increased from 0 to 15 at %. Evidence of this phase transition was obtained from X-ray diffraction and optical absorption measurements. For the films with low oxygen content an increase in the interplanar distances was observed, yielding to a reduction of the band gap of the material. Samples containing hexagonal CdTe nanocrystals show larger energy band gaps, as compared with those having the cubic CdTe phase. Copyright (C) 1996 Published by Elsevier Science Ltd.
引用
收藏
页码:39 / 43
页数:5
相关论文
共 14 条
[1]  
AKIMOTO K, 1991, APPL PHYS LETT, V60, P91
[2]  
EBINA A, 1980, PHYS REV B, V22, P1980, DOI 10.1103/PhysRevB.22.1980
[3]  
EFROS AL, 1982, SOV PHYS SEMICOND+, V16, P772
[4]   VARIABLE ENERGY-GAP IN OXYGENATED AMORPHOUS CADMIUM TELLURIDE [J].
ESPINOZABELTRAN, FJ ;
SANCHEZSINENCIO, F ;
ZELAYAANGEL, O ;
MENDOZAALVAREZ, JG ;
ALEJOARMENTA, C ;
VAZQUEZLOPEZ, C ;
FARIAS, MH ;
SOTO, G ;
COTAARAIZA, L ;
PENA, JL ;
AZAMARBARRIOS, JA ;
BANOS, L .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1715-L1717
[5]   STRUCTURAL AND OPTICAL STUDIES IN OXYGENATED AMORPHOUS CDTE-FILMS [J].
ESPINOZABELTRAN, FJ ;
ZELAYA, O ;
SANCHEZSINENCIO, F ;
MENDOZAALVAREZ, JG ;
FARIAS, MH ;
BANOS, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (06) :3062-3066
[6]  
GARCIA VM, 1995, SEMICOND SCI TECH, V10, P427
[7]   CRYSTALLIZATION TEMPERATURE OF ULTRAHIGH-VACUUM DEPOSITED SILICON FILMS [J].
GONZALEZHERNANDEZ, J ;
MARTIN, D ;
CHAO, SS ;
TSU, R .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :101-103
[8]  
POTTER BG, 1990, J APPL PHYS, V68, P7315
[9]   CDTE NANOSTRUCTURES PREPARED BY THERMAL ANNEALING [J].
RAMIREZBON, R ;
ESPINOZABELTRAN, FJ ;
ARIZPECHAVEZ, H ;
ZELAYAANGEL, O ;
SANCHEZSINENCIO, F .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5461-5463
[10]   PRESSURE INDUCED PHASE TRANSITIONS IN SOME 2-6 COMPOUNDS [J].
SAMARA, GA ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :457-&