CRYSTALLIZATION TEMPERATURE OF ULTRAHIGH-VACUUM DEPOSITED SILICON FILMS

被引：13

作者：

GONZALEZHERNANDEZ, J

MARTIN, D

CHAO, SS

TSU, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.95002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / 103

页数：3

共 18 条

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[9] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].

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[10] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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