VARIABLE ENERGY-GAP IN OXYGENATED AMORPHOUS CADMIUM TELLURIDE

被引：17

作者：

ESPINOZABELTRAN, FJ

SANCHEZSINENCIO, F

ZELAYAANGEL, O

MENDOZAALVAREZ, JG

ALEJOARMENTA, C

VAZQUEZLOPEZ, C

FARIAS, MH

SOTO, G

COTAARAIZA, L

PENA, JL

AZAMARBARRIOS, JA

BANOS, L

机构：

[1] UNIV AVTOMA PUEBLA, INST FIS, PUEBLA 72570, MEXICO

[2] IFUNAM, LAB ENSENADA, BAJA CALIFORNIA 2681, MEXICO

[3] CINVESTAV IPN, UNIDAD MERIDA, MERIDA, MEXICO

[4] NATL AUTONOMOUS UNIV MEXICO, INST INV MAT, MEXICO CITY 04510, DF, MEXICO

[5] UNIV SONORA, CIF, HERMOSILLO, SONORA, MEXICO

[6] UNIV AVTONOMA SINALOA, ECFM, CULIACAN, SINALOA, MEXICO

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

SEMICONDUCTORS; OPTICAL PROPERTIES; THIN FILMS; AMORPHOUS SEMICONDUCTORS; PHOTOVOLTAIC MATERIALS;

D O I：

10.1143/JJAP.30.L1715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new material, oxygenated amorphous cadmium telluride, is introduced into the II-VI semiconductor compounds family. Amorphous films of this material have been grown by a radio frequency sputtering deposition technique, using a controlled plasma (Ar-O-N) on glass slides substrates positively dc biased. We show that the bandgap of the films can be changed in a controlled way in the range from 1.48 to 2.02 eV depending on the amount of oxygen present in the sample.

引用

页码：L1715 / L1717

页数：3

共 20 条

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