BAND-GAP TAILORING IN AMORPHOUS GERMANIUM-NITROGEN COMPOUNDS

被引：21

作者：

CHAMBOULEYRON, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：117 / 119

页数：3

共 23 条

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[4] NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .1. THE CHOICE OF THE INSULATOR AND DEPOSITION
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 78 (01): : 115 - 123
[5] NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .2. COMPOSITION, PROPERTIES, AND THE INTERFACE WITH A SEMICONDUCTOR
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 78 (02): : 391 - 400
[6] MIS STRUCTURE GAAS-GE3N4AL
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[7] Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7
[8] SURFACE-STATES AT THE GAAS GERMANIUM NITRIDE INTERFACE
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[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 193 - 199
[9] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM
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[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804
[10] EXAFS INVESTIGATION OF AMORPHOUS-TO-CRYSTAL TRANSITION IN GE
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[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 413 - 416

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