NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .1. THE CHOICE OF THE INSULATOR AND DEPOSITION

被引：5

作者：

BAGRATISHVILI, GD

DZHANELIDZE, RB

JISHIASHVILI, DA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1983年 / 78卷 / 01期

关键词：

D O I：

10.1002/pssa.2210780113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：115 / 123

页数：9

共 28 条

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