GAAS-GE3N4-AL STRUCTURES AND MIS FIELD-EFFECT TRANSISTORS BASED ON THEM

被引：12

作者：

BAGRATISHVILI, GD

DZHANELIDZE, RB

KURDIANI, NI

PASHINTSEV, YI

SAKSAGANSKI, OV

SKORIKOV, VA

机构：

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90065-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：209 / 213

页数：5

共 15 条

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[3]

BECKE HW, 1967, ELECTRONICS, V40, P82

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[6] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J].

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[8] MICROWAVE FIELD-EFFECT TRANSISTORS FROM SULFUR-IMPLANTED GAAS [J].

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[9] ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE [J].

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[10] GAAS FETS WITH SILICON-IMPLANTED CHANNELS [J].

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