SURFACE-STATES AT THE GAAS GERMANIUM NITRIDE INTERFACE

被引：2

作者：

CHUNG, Y ^{[1
]}

LANGER, DW ^{[1
]}

SINGH, HP ^{[1
]}

WOOLLAM, JA ^{[1
]}

机构：

[1] UNIV NEBRASKA, DEPT ELECT ENGN, LINCOLN, NE 68588 USA

来源：

关键词：

D O I：

10.1016/0040-6090(83)90435-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：193 / 199

页数：7

共 12 条

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[2] SILICON-NITRIDE-GALLIUM-ARSENIDE MIS STRUCTURES PRODUCED BY PLASMA ENHANCED DEPOSITION
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JOHNSON, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3515 - 3519
[3] BAYRAKTAROGLU B, 1980, PHYSICS MOS INSULATO, P207
[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
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[6] DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS
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[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 225 - 234
[7] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407
[8] GE3N4-INP MIS STRUCTURES
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[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 182 - 184
[9] ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
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[J]. ELECTRONICS LETTERS, 1976, 12 (18) : 471 - 472
[10] OXIDE AND INTERFACE PROPERTIES OF ANODIC OXIDE MOS STRUCTURES ON III-V COMPOUND SEMICONDUCTORS
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[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 173 - 182