OXIDE AND INTERFACE PROPERTIES OF ANODIC OXIDE MOS STRUCTURES ON III-V COMPOUND SEMICONDUCTORS

被引：47

作者：

WEIMANN, G

机构：

[1] Forschungsinstitut der Deutschen Bundespost beim Fernmeldetechnischen Zentralamt, D 6100 Darmstadt

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90062-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MOS structures made with anodic oxides on GaAs, GaSb or GaP showed high interface state densities, especially in the upper half of the band gap. Charge injection into the oxides was observed. The properties of the oxides are discussed. © 1979.

引用

页码：173 / 182

页数：10

共 22 条

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