PROPERTIES OF NATIVE OXIDE ON GASB

被引:11
作者
FISCHER, CW [1 ]
LESLIE, N [1 ]
ETCHELLS, A [1 ]
机构
[1] UNIV GUELPH,PHYS DEPT,GUELPH,ONTARIO,CANADA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期
关键词
D O I
10.1116/1.568956
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:59 / 63
页数:5
相关论文
共 14 条
[1]  
Born M., 1964, PRINCIPLES OPTICS
[3]   PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].
GOBELI, GW ;
ALLEN, FG .
PHYSICAL REVIEW, 1965, 137 (1A) :A245-&
[4]   DETERMINATION OF SILICON OXIDE THICKNESS [J].
GOLDSMITH, N ;
MURRAY, LA .
SOLID-STATE ELECTRONICS, 1966, 9 (04) :331-+
[5]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[6]  
MITCHELL EWJ, 1952, P R SOC A, V210, P70
[7]   The adsorption of oxygen and hydrogen on platinum and the removal of these gases by positive-ion bombardment [J].
Oatley, CW .
PROCEEDINGS OF THE PHYSICAL SOCIETY, 1939, 51 :318-328
[8]   PHASE-SHIFT CORRECTIONS IN DETERMINING THICKNESSES OF TRANSPARENT FILMS ON REFLECTIVE SUBSTRATES [J].
PLISKIN, WA .
SOLID-STATE ELECTRONICS, 1968, 11 (10) :957-&
[9]  
REIZMANN T, 1967, SOLID STATE ELECTRON, V10, P625
[10]   AN AMORPHOUS MODIFICATION OF GALLIUM-ARSENIC (V) OXIDE [J].
REVESZ, AG ;
ZAININGER, KH .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (12) :606-606