OPTICAL-PROPERTIES OF ANODIC OXIDE-FILMS ON GAAS BY ELLIPSOMETRY

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] MECHANISM OF GAAS ANODIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 239 - 241

[3] LUKES F, 1970, OPTIK, V31, P83

[4] SCHLAPP W, 1976, 18 TECHN BER

[5] STUKE J, 1972, PHYS STATUS SOLIDI B, V49, P518

[6] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[7] Theye M. L., 1974, AMORPHOUS LIQUID SEM, V1, P479

[8] ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 802 - 804

[9] ANODIC-OXIDATION OF GALLIUM-ARSENIDE [J]. THIN SOLID FILMS, 1976, 38 (02) : L5 - L7

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] MECHANISM OF GAAS ANODIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 239 - 241

[3] LUKES F, 1970, OPTIK, V31, P83

[4] SCHLAPP W, 1976, 18 TECHN BER

[5] STUKE J, 1972, PHYS STATUS SOLIDI B, V49, P518

[6] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[7] Theye M. L., 1974, AMORPHOUS LIQUID SEM, V1, P479

[8] ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 802 - 804

[9] ANODIC-OXIDATION OF GALLIUM-ARSENIDE [J]. THIN SOLID FILMS, 1976, 38 (02) : L5 - L7