GE3N4-INP MIS STRUCTURES

被引：12

作者：

PANDE, KP ^{[1
]}

POURDAVOUD, S ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT ENGN,PISCATAWAY,NJ 08854

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 07期

关键词：

D O I：

10.1109/EDL.1981.25391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：182 / 184

页数：3

共 19 条

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KURDIANI, NI ;

SAKSAGANSKII, OV .

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[2]

BAYRAKTAROGLU B, 1980, PHYSICS MOS INSULATO, P207

[3] AL-AL2O3-INP MIS STRUCTURES [J].

FAVENNEC, PN ;

LECONTELLEC, M ;

LHARIDON, H ;

PELOUS, GP ;

RICHARD, J .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :807-808

[4] INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].

FRITZSCHE, D .

ELECTRONICS LETTERS, 1978, 14 (03) :51-52

[5] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J].

KAMIMURA, K ;

SAKAI, Y .

THIN SOLID FILMS, 1979, 56 (1-2) :215-223

[6] AN INSULATED-GATE CHARGE-TRANSFER DEVICE ON INP [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :552-553

[7] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[8] POWER GAIN AND NOISE OF INP AND GAAS INSULATED GATE MICROWAVE FETS [J].

MESSICK, L .

SOLID-STATE ELECTRONICS, 1979, 22 (01) :71-&

[9] INP-SIO2 MIS STRUCTURE [J].

MESSICK, L .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951

[10] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156

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