A novel frequency-multiplication device based on three-terminal ballistic junction

被引：55

作者：

Shorubalko, I ^{[1
]}

Xu, HQ ^{[1
]}

Maximov, I ^{[1
]}

Nilsson, D ^{[1
]}

Omling, P ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 07期

关键词：

ballistic devices; frequency-multiplication; three-terminal ballistic junctions;

D O I：

10.1109/LED.2002.1015202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.

引用

页码：377 / 379

页数：3

共 14 条

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