Kinetic one-dimensional Ising system on a narrow Si(001)SB terrace

被引:13
作者
Kawai, H [1 ]
Nakamura, Y
Nakayama, M
机构
[1] Kyushu Univ, Fac Sci, Dept Phys, Fukuoka 8108560, Japan
[2] Kyushu Univ, Venture Business Lab, Fukuoka 8128581, Japan
关键词
Si(001); Monte Carlo simulation; time resolving simulation; kinetic one-dimensional Ising system; STM;
D O I
10.1143/JPSJ.68.3936
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The time resolving dynamical Monte Carlo simulations(DMCS) on a narrow Si(001)SR terrace are performed with the parameters obtained from the first-principles procedures. It is shown that the two-body time-correlation functions of the system correspond to those of the ideal kinetic one-dimensional Ising system. The dynamical feature of the flip-flop motion or dimers in the system is well described by the ideal kinetic one-dimensional Ising system. The one-dimensional kinetic transition rates on the system are obtained. The one-dimensional fluctuation ol. the system is enough slow to he observed by STM at realistic temperature.
引用
收藏
页码:3936 / 3940
页数:5
相关论文
共 12 条
[1]   ORDER-DISORDER PHASE-TRANSITION ON THE SI(001) SURFACE - CRITICAL ROLE OF DIMER DEFECTS [J].
INOUE, K ;
MORIKAWA, Y ;
TERAKURA, K ;
NAKAYAMA, M .
PHYSICAL REVIEW B, 1994, 49 (20) :14774-14777
[2]  
INOUE K, 1993, SPRINGER SERIES SOLI, V114, P77
[3]  
INOUE K, 1993, THESIS KYUSHU U
[4]   MONTE-CARLO SIMULATION OF THIN-FILM GROWTH ON SI SURFACES [J].
KAWAMURA, T .
PROGRESS IN SURFACE SCIENCE, 1993, 44 (01) :67-99
[5]   FAST MONTE-CARLO SIMULATION OF MBE GROWTH [J].
MAKSYM, PA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :594-596
[6]   One-dimensional character of the dimer structure of SB terrace on a Si(001) surface [J].
Nakamura, Y ;
Kawai, H ;
Nakayama, M .
SURFACE SCIENCE, 1998, 416 (1-2) :167-176
[7]   Theory on STM images of an Si(001) surface with steps [J].
Nakamura, Y ;
Kawai, H ;
Nakayama, M .
SURFACE SCIENCE, 1996, 357 (1-3) :500-503
[8]   THEORY ON STM IMAGES OF SI(OO1) SURFACE NEAR DEFECTS [J].
NAKAMURA, Y ;
KAWAI, H ;
NAKAYAMA, M .
PHYSICAL REVIEW B, 1995, 52 (11) :8231-8238
[9]   Influence of defects on the order-disorder phase transition of a Si(001) surface [J].
Nakamura, Y ;
Kawai, H ;
Nakayama, M .
PHYSICAL REVIEW B, 1997, 55 (16) :10549-10560
[10]   Little influence of kinks on the formation of c(4X2) domains in a Si(001) surface at low temperature [J].
Tochihara, H ;
Nakamura, Y ;
Kawai, H ;
Nakayama, M ;
Sato, T ;
Sueyoshi, T ;
Amakusa, T ;
Iwatsuki, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1998, 67 (07) :2330-2334