Little influence of kinks on the formation of c(4X2) domains in a Si(001) surface at low temperature

被引：8

作者：

Tochihara, H

Nakamura, Y

Kawai, H

Nakayama, M

Sato, T

Sueyoshi, T

Amakusa, T

Iwatsuki, M

机构：

[1] Kyushu Univ, Dept Appl Phys, Fukuoka 8108560, Japan

[2] Kyushu Univ, Venture Business Lab, Fukuoka 8128581, Japan

[3] Kyushu Univ, Fac Sci, Dept Phys, Fukuoka 8108560, Japan

[4] Jeol Ltd, Tokyo 1968558, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 07期

关键词：

Si(001) surface; scanning tunneling microscopy; Monte Carlo simulation; kink; phase transition;

D O I：

10.1143/JPSJ.67.2330

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structure of a Si(001) surface with monatomic steps is investigated by means of scanning tunneling microscopy at 95K and Monte Carlo simulations (MCS) at various temperatures. In particular, we pay attention to the effect of kinks at the step edge on the formation of c(4 x 3) domains, and both studies reveal that the kinks do not govern che growth of the domains. MCS demonstrates that the nucleation of c(4 x 2) domains takes place at central regions of the terrace as a result of thermal fluctuation, and that the domains propagate to the step edge with decreasing temperature.

引用

页码：2330 / 2334

页数：5

共 27 条

[1] SCANNING-TUNNELING-MICROSCOPY AT LOW-TEMPERATURES ON THE C(4X2)/(2X1) PHASE-TRANSITION OF SI(100) [J].