Shape evolution of Ge domes on Si (001) during Si capping

被引：9

作者：

Rastelli, A

Kummer, M

von Känel, H

机构：

[1] Univ Pavia, INFM, I-27100 Pavia, Italy

[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[3] Swiss Fed Inst Technol, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[4] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

Ge quantum dots; capping; shape transitions;

D O I：

10.1016/S1386-9477(02)00290-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three-dimensional. coherently strained Ge Si (0 0 1) islands Acre overgrown with thin Si layers and their shape evolution was studied by scanning tunneling microscopy. The Si cap, necessary for exploiting the clusters as self-assembled quantum dots, intermixes with the Ge layer leading the dome-shaped islands to transform first into {105} faceted pyramids and finally into stepped mounds with steps parallel to the <1 1 0> directions. The observed morphological transitions can be understood in a general picture in which the shape of an island mainly depends on its volume and composition. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：1008 / 1012

页数：5

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