Si overgrowth of self-assembled Ge clusters on Si(001) -: a scanning tunnelling microscopy study

被引：25

作者：

Kummer, M ^{[1
]}

Vögeli, B ^{[1
]}

von Känel, H ^{[1
]}

机构：

[1] ETH Honggerberg, Festkorperphys Lab, CH-8093 Zurich, Switzerland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

D O I：

10.1016/S0921-5107(99)00304-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first stages of the Si overgrowth of self-assembled Ge quantum dots on Si(001) have been studied by scanning tunnelling microscopy. Both the smaller 'hut' clusters (width 30-60 nm, {105} side facets) and the larger 'domes' (width 60-100 nm, mostly {113} side facets) have been investigated. We obtain direct evidence of a distinct change of the morphology of the clusters even for low Si coverages. In case of the hut clusters this leads to a transition towards the shape of truncated pyramids. Even for the large dome clusters an abrupt decrease in the aspect ratio z/x can be observed at Si coverages as low as a few monolayers. We discuss the mechanisms, which can lead to this behaviour and compare with the observations of other studies. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：247 / 250

页数：4

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