Embedding of nanoscale 3D SiGe islands in a Si matrix

被引：131

作者：

Sutter, P ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.81.3471

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The epitaxial embedding of faceted three-dimensional SiGe islands in a Si matrix has been investigated by low-energy electron microscopy. Under a Si flux these islands expand and undergo a shape change to incorporate a (100) top facet. A physical interpretation of the atomistic mechanism producing the shape change is presented and supported with a simple model. [S0031-9007(98)07384-0].

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页码：3471 / 3474

页数：4

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