DIFFUSION OF SI INTO GE STUDIED BY CORE LEVEL PHOTOEMISSION

被引：39

作者：

HOEVEN, AJ

AARTS, J

LARSEN, PK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.575733

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：5 / 8

页数：4

共 14 条

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[3] CORE-LEVEL STUDY OF THE PHASE-TRANSITION ON THE GE(111)-C(2X8) SURFACE
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LARSEN, PK
[J]. PHYSICAL REVIEW B, 1988, 38 (06): : 3925 - 3930
[4] AARTS J, 1986, APPL PHYS LETT, V48, P933
[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
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[6] FELDMAN LC, FUNDAMENTALS SURFACE, P129
[7] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7)
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[J]. SURFACE SCIENCE, 1985, 155 (2-3) : 413 - 431
[8] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES
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[9] DESIGN AND PERFORMANCE OF A TOROIDAL GRAZING-INCIDENCE MONOCHROMATOR FOR THE 20-200 EV PHOTON ENERGY-RANGE
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EDERER, D
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[10] HETEROJUNCTION BAND DISCONTINUITY AT THE SI-GE(111) INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1252 - 1255

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