DIFFUSION OF SI INTO GE STUDIED BY CORE LEVEL PHOTOEMISSION

被引：39

作者：

HOEVEN, AJ

AARTS, J

LARSEN, PK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.575733

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：5 / 8

页数：4

共 14 条

[11] THIN EPITAXIAL GE-SI(111) FILMS - STUDY AND CONTROL OF MORPHOLOGY
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[14] THE SILICON GERMANIUM(111) INTERFACE - THE ONSET OF EPITAXY
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