INTERFACE STRUCTURE OF EPITAXIAL GE-SI(111) SYSTEM STUDIED BY HIGH-ENERGY ION-SCATTERING

被引：18

作者：

NARUSAWA, T

GIBSON, WM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：709 / 712

页数：4

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