Nonvolatile memory cell effect in multilayered Ni1-xFex self-assembled nanoparticle arrays in polyimpide

被引：39

作者：

Jung, Jae Hun

Kim, Jae Ho

Kim, Tae Whan ^{[1
]}

Yoon, Chong Seung

Kim, Young-Ho

Jin, Sungho

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[3] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.2220548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy images showed that self-assembled Ni1-xFex nanoparticle arrays were periodically inserted in the polyimide (PI) layers. Capacitance-voltage (C-V) measurements on Al/PI/multiple-stacked Ni1-xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed a metal-insulator-semiconductor capacitor behavior with different flatband voltage shifts, which depended on the value of the sweep voltage, due to the variations of the charged electron density in the multiple-stacked Nil,Fe, nanoparticle arrays. Conductance-voltage (G-V) measurements showed that the conductance peak related to the interface trap disappeared, and that the positions of the C-V and the G-V hystereses at the sweep voltage were different. (c) 2006 American Institute Of Physics.

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