Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO2 tunnel barrier

被引：15

作者：

Baik, SJ

Lim, KS

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Samsung Elect Co, Seoul, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1533119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanocrystal floating gate memory employing an amorphous carbon (a-C)/SiO2 double-layered tunnel barrier was fabricated. The band gap of a-C and conduction band discontinuity between a-C and Si was estimated to be 1.95 and 0.4 eV, respectively. In addition, interface states density of the a-C/SiO2/channel Si was estimated from the capacitance-voltage measurement. The nanocrystal memory using this tunnel barrier exhibited enhanced charge retention than that employing a single SiO2 tunnel barrier whereas the injection efficiency is comparable between them, which is due to the asymmetrical band profile of the tunnel barrier. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1533119].

引用

页码：5186 / 5188

页数：3

共 13 条

[1]

BAIK SJ, 2000, S 5 15 MAT RES SOC 2

[2] The carrier injection type thin-film light-emitting diode with hydrogenated amorphous carbon active layer [J].