Schottky contacts on amorphous carbon: A more reliable approach

It is considered impossible to form Schottky contacts on amorphous hydrogenated carbon (a-C:H). Taking the lead from our earlier work in which we report the formation of Schottky contacts on radio frequency plasma enhanced chemical vapor deposition (rf PECVD) grown a-C:H films, here we present a way of confining the semiconductor-like parts of a-C:H to particular regions of the films. Thus, the location and formation of Schottky contacts in a-C:H, are rendered more predictable. This was achieved by depositing a-C:H on metal-patterned Si substrates. (C) 2001 American Institute of Physics.