Electrical properties of amorphous Rh oxide thin films prepared by reactive sputtering

被引：10

作者：

Abe, Y ^{[1
]}

Kato, K ^{[1
]}

Kawamura, M ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 01期

关键词：

conducting oxide; Rh2O3RhO2; thin film; reactive sputtering; XPS; XRD; EPMA; resistivity; TCR;

D O I：

10.1143/JJAP.39.245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conducting Rh oxide thin films were prepared by sputtering a Rh target in an Ar and O-2 mixed gas. Effects of the oxygen gas now ratio on the crystallinity, chemical bonding state and resistivity were studied. Amorphous Rh2O3 films were prepared at an O-2 flow ratio of 20%. The Rh2O3 films had a relatively high resistivity of 2 m Ohm cm and a negative temperature coefficient of resistance (TCR) of -1000 ppm/degrees C, which indicated semiconducting characteristics. On the other hand, amorphous RhOx films with: a composition of 1.5 less than or equal to x less than or equal to 1.7 were prepared at O-2 flow ratios above 40%. Resistivity of these RhOx films were 800 mu Ohm cm and had almost no temperature dependence. Metallic conduction characteristics of RhO2 were assumed to be revealed by the decrease in the oxygen deficiency.

引用

页码：245 / 247

页数：3

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