The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

被引：355

作者：

Park, Min Hyuk

Kim, Han Joon

Kim, Yu Jin

Moon, Taehwan

Hwang, Cheol Seong ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 07期

关键词：

STABILIZED ZIRCONIA; HEAT-CAPACITY; PRESSURE; GROWTH; HFO2; ZRO2; TEMPERATURE; BEHAVIOR; PT(111); PHASES;

D O I：

10.1063/1.4866008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To elucidate the origin of the formation of the ferroelectric phase in Hf0.5Zr0.5O2 films, the effects of film strain and crystallographic orientation on the properties were examined. Using a (111)-textured Pt bottom electrode, Hf0.5Zr0.5O2 films with a (111)-preferred texture inappropriate for transforming their phase from non-ferroelectric tetragonal to ferroelectric orthorhombic phase were deposited. In contrast, randomly oriented Hf0.5Zr0.5O2 films, grown on the TiN electrode, showed feasible ferroelectric properties due to their transformation to the ferroelectric orthorhombic phase. The origin of such transformation is the large in-plane tensile strain for the elongation of the c-axis of the tetragonal phase. (C) 2014 AIP Publishing LLC.

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页数：5

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