Indium tin oxide ohmic contact to highly doped n-GaN

被引：40

作者：

Sheu, JK

Su, YK

Chi, GC ^{[1
]}

Jou, MJ

Liu, CC

Chang, CM

机构：

[1] Natl Cent Univ, Dept Phys, Opt Sci Ctr, Chungli 32054, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Epistar Corp, Hsinchu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(99)00177-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of the indium tin oxide (ITO) contacts on n-GaN with various doping concentrations have been studied. Ohmic behavior was observed for ITO films on highly doped n-GaN (n = 1 x 10(19) cm(-3)) without thermal annealing and the measured specific contact resistance was 5.1 x 10(-4) Omega cm(2). This result could be attributed to the formation of a tunneling junction on the heavily n-type GaN surface. However, as the thermal annealing was performed to the ITO/n-GaN (n = 1 x 10(19) cm(-3)) Ohmic contact, it exhibited Schottky characteristics. This result might be due to the microscopic interfacial reaction among In, Sn, O and GaN and their alloys which extend into GaN films, thereby influencing the electrical properties of ITO/n-GaN contacts. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：2081 / 2084

页数：4

共 11 条

[1] High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors [J].