INDIUM TIN OXIDE AS TRANSPARENT ELECTRODE MATERIAL FOR ZNSE-BASED BLUE QUANTUM-WELL LIGHT EMITTERS

被引：43

作者：

HAGEROTT, M

JEON, H

NURMIKKO, AV

XIE, W

GRILLO, DC

KOBAYASHI, M

GUNSHOR, RL

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] PURDUE UNIV,SCH ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n-Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.

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页码：2825 / 2827

页数：3

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