An inkjet-printed passivation layer based on a photocrosslinkable polymer for long-term stable pentacene field-effect transistors

被引：24

作者：

Nam, Sooji ^{[1
]}

Jeon, Hayoung ^{[1
]}

Kim, Se Hyun ^{[1
]}

Jang, Jaeyoung ^{[1
]}

Yang, Chanwoo ^{[1
]}

Park, Chan Eon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Polymer Res Inst, Pohang 790784, South Korea

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 01期

关键词：

Inkjet-printing; Passivation; Pentacene FETs; Photocrosslinkable polymer; THIN-FILM TRANSISTORS; H2O; AIR;

D O I：

10.1016/j.orgel.2008.10.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, we investigate the effects of the solvents used in the passivation process on the behavior of pentacene field-effect transistors (FETs) and report on the fabrication of a passivation layer for pentacene FETs via inkjet-printing using photocrosslinkable poly(vinyl alcohol), N-methyl-4(4'formylstyryl) pyridinium methosulfate acetal (SbQ-PVA). The passivated pentacene FETs - composed of inkjet-printed SbQ-PVA containing polystyrene/SiO2 and poly(4-vinyl phenol)/SiO2 dual-layer gate dielectrics - retain their electrical properties for much longer periods than the unpassivated devices. Studies of the device performance show that inkjet-printed passivation is better than spin-coated passivation. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：67 / 72

页数：6

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