Weak-beam dark-field electron-tomography of dislocations in GaN

被引:17
作者
Barnard, J. S. [1 ]
Sharp, J. [1 ]
Tong, J. R. [1 ]
Midgley, P. A. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Pembroke St, Cambridge CB2 3QZ, England
来源
EMAG-NANO 2005: IMAGING, ANALYSIS AND FABRICATION ON THE NANOSCALE | 2006年 / 26卷
关键词
D O I
10.1088/1742-6596/26/1/059
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
By combining weak-beam dark-field imaging with tomography, we have been able to reconstruct the three-dimensional structure of dislocation arrays in GaN. With a mixture of both threading and in-plane. dislocations, owing to plastic relaxation of the film, we look at how well each dislocation is reconstrucaed and what limits are imposed by way of dislocation density and material anisotropy.
引用
收藏
页码:247 / +
页数:2
相关论文
共 9 条
[1]   ELASTIC CONSTANTS OF COMPRESSION-ANNEALED PYROLYTIC GRAPHITE [J].
BLAKSLEE, OL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3373-+
[2]   INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].
COCKAYNE, DJ ;
RAY, ILF ;
WHELAN, MJ .
PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&
[3]  
Hirsch PB, 1977, ELECT MICROSCOPY THI
[4]  
Hirth J. P., 1982, THEORY DISLOCATIONS
[6]   Three-dimensional imaging of crystal defects by 'topo-tomography' [J].
Ludwig, W ;
Cloetens, P ;
Härtwig, J ;
Baruchel, J ;
Hamelin, B ;
Bastie, P .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2001, 34 :602-607
[7]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2
[8]  
Stobbs W.M., 1975, EL MICR MAT SCI P 3, V1-2, P591
[9]   Electron tomography [J].
Weyland, Matthew ;
Midgley, Paul A. .
MATERIALS TODAY, 2004, 7 (12) :32-40