A lift-off process for high resolution patterns using PMMA/LOR resist stack

被引：58

作者：

Chen, YF ^{[1
]}

Peng, KW

Cui, Z

机构：

[1] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

electron beam lithography; lift-off; undercut length; LOR; dissolution rate; high resolution patterning;

D O I：

10.1016/j.mee.2004.02.053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lift-off process using a bi-layer resist stack with PMMA on top and lift-off resist (LOR) below was investigated. The dissolution rates of LOR underneath the PMMA layer in alkali solvent, CD26, were measured under various processing conditions. Our results indicate that the undercut length can be well controlled so that pattern transfer by lift-off using this bi-layer structure can be carried out reliably for feature sizes from sub micron down to sub 100 nm. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：278 / 281

页数：4

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