Thick-film lithography using laser write

被引:8
作者
Cheng, Y [1 ]
Huang, T
Chieng, CC
机构
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tsing Hua Univ, Ctr Atom & Mol Nanosci, Beijing 100084, Peoples R China
[3] Synchrotron Radiat Res Ctr, Microstruct Grp, Hsinchu 30077, Taiwan
[4] Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30077, Taiwan
关键词
Laser Light; Intensity Filler; Intensity Fluctuation; Board Industry; Multiple Writing;
D O I
10.1007/s00542-002-0201-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mask-making process by laser direct-write has been broadly applied in the microelectronics and the PC board industries. In this paper, we report the thick-film lithography of laser write mainly for the X-ray mask in the LIGA application. Several schemes of multiple writing are successfully demonstrated in terms of the sidewall straightness and free from intensity fluctuation of laser light. Present study adopts the applications of the positive resist of AZ P4620 prepared with a thickness of 30 mum anti-reflection coating of AZ BARE II on the substrate, and intensity filler to achieve smooth and straight sidewalls.
引用
收藏
页码:17 / 22
页数:6
相关论文
共 7 条
[1]   Nonparametric density estimation under unimodality and monotonicity constraints [J].
Cheng, MY ;
Gasser, T ;
Hall, P .
JOURNAL OF COMPUTATIONAL AND GRAPHICAL STATISTICS, 1999, 8 (01) :1-21
[2]   Ultra-deep LIGA process [J].
Cheng, Y ;
Shew, BY ;
Lin, CY ;
Wei, DH ;
Chyu, MK .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1999, 9 (01) :58-63
[3]   Concepts for creating ultra-deep trenches using deep X-ray lithography [J].
Cheng, Y ;
Shew, BY ;
Lin, CH ;
Chyu, MK .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 82 (1-3) :205-209
[4]   CHARACTERIZATION OF POSITIVE PHOTORESIST [J].
DILL, FH ;
HORNBERGER, WP ;
HAUGE, PS ;
SHAW, JM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :445-452
[5]  
EDWARDS DF, 1985, HDB OPTICAL CONSTANT, P547, DOI DOI 10.1016/B978-0-08-054721-3.50029-0
[6]   ANALYTICAL EXPRESSION FOR THE STANDING WAVE INTENSITY IN PHOTORESIST [J].
MACK, CA .
APPLIED OPTICS, 1986, 25 (12) :1958-1961
[7]  
Moreau W.M, 1988, SEMICONDUCTOR LITHOG, P29