Effect of oxygen on methyl radical concentrations in a CH4/H-2 chemical vapor deposition reactor studied by infrared diode laser spectroscopy

被引:15
作者
Fan, WY
Ropcke, J
Davies, PB
机构
[1] UNIV CAMBRIDGE,CHEM LAB,CAMBRIDGE CB2 1EW,ENGLAND
[2] INST LOW TEMP PLASMA PHYS,D-17489 GREIFSWALD,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 05期
关键词
D O I
10.1116/1.580255
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
[No abstract available]
引用
收藏
页码:2970 / 2972
页数:3
相关论文
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