Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

被引：43

作者：

Popov, VP ^{[1
]}

Antonova, IV ^{[1
]}

Stas, VF ^{[1
]}

Gutakovskii, AK ^{[1
]}

Spesivtsev, EV ^{[1
]}

Mardegzhov, AS ^{[1
]}

Franznusov, AA ^{[1
]}

Feofanov, GN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期

关键词：

SOI; ultrathin layer; oxidation; flatness; uniformity;

D O I：

10.1016/S0921-5107(99)00437-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of the report is a creation of extremely thin silicon-on-insulator (SOI) structures for quantum devices with layer-by-layer oxidation of smart-cut SOI wafers. The present work deals with investigation of structural, optical and electronic properties of SOI structures by HRTEM, RES, and spectroscopic ellipsometry (SE), Hall and Pseudo-MOSFET measurements. It is demonstrated that this technology of SOI structure preparation provides a high flatness of interface between buried oxide (BOX) and top silicon layer. Layer-by-layer oxidation with subsequent stripping in diluted HF allows us to save the uniformity and flatness of initial SOI layers up to 10 nm film thickness. A further thinning leads to decrease of oxidation rate and non-uniform growth. A mechanism of these processes is suggested. (C) 2000 published by Elsevier Science S.A. All rights reserved.

引用

页码：82 / 86

页数：5

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