Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

被引：145

作者：

Kaajakari, V ^{[1
]}

Mattila, T ^{[1
]}

Qja, A ^{[1
]}

Kiihamäki, J ^{[1
]}

Seppä, H ^{[1
]}

机构：

[1] VTT Informat Technol, FIN-02044 Espoo, Finland

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期

关键词：

bulk acoustic wave devices; microresonators; oscillator noise; oscillators; phase noise; resonators; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LED.2004.824840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A micromechanical 13.1-MHz bulk acoustic mode silicon. resonator having a high quality factor (Q = 130000) and high maximum drive level (P = 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of A silicon-on-insulatior wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of - 138 dBc/Hz at 1 kHz offset from the carrier.

引用

页码：173 / 175

页数：3

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