Spectral ellipsometry investigation of Zn0.53Cd0.47Se lattice matched to InP

被引：100

作者：

Holden, T

Ram, P

Pollak, FH

Freeouf, JL

Yang, BX

Tamargo, MC

机构：

[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,BROOKLYN,NY 11210

[2] INTERFACE STUDIES INC,KATONAH,NY 10536

[3] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

[4] CUNY CITY COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,NEW YORK,NY 10031

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.56.4037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectral ellipsometry at 300 K, in the range 0.8-5.5 eV, has been used to study the bulk and surface oxide properties of a molecular-beam-epitaxy grown Zn0.53Cd0.47Se/InP film (approximate to 1 mu m thick). We have observed the direct gap E-0, which exhibits a well-defined excitonic structure, its spin-orbit split component E-0+Delta(0), as well as the spin-orbit split E-1, E-1+Delta(1) doublet. The experimental data over the entire measured spectral range (after oxide removal) have been fit using a model dielectric function based on the electronic energy-band structure near critical points plus excitonic and Coulomb enhancement effects. The influence of a native oxide on the optical properties also was investigated.

引用

页码：4037 / 4046

页数：10

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